Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.7 V
Continuous Collector Current at 25 C
480 A
Gate-Emitter Leakage Current
400 nA
Pd - Power Dissipation
1.45 kW
Operating Temperature
-40°C ~ 125°C